Herng Liu

The surface chemistry of aluminum nitride MOCVD on alumina using trimethylaluminum and ammonia as precursors

Herng Liu, Daniel C. Bertolet, J.W. Rogers · Surface Science · 1994 · 61 citations

Materials Science, Aluminium Nitride, Engineering +8

Reactions of trimethylaluminum and ammonia on alumina at 600 K — surface chemical aspects of AlN thin film growth

Herng Liu, Daniel C. Bertolet, J.W. Rogers · Surface Science · 1995 · 46 citations

Materials Science, Aluminium Nitride, Chemical Engineering +6

Initial stages of AlN thin-film growth on alumina using trimethylamine alane and ammonia precursors

Daniel C. Bertolet, Herng Liu, J.W. Rogers · Journal of Applied Physics · 1994 · 35 citations

Aluminium Nitride, Engineering, Crystal Growth Technology +19

Mechanistics of early stage growth of aluminum nitride on alumina. 2. TMAl and ammonia

Daniel C. Bertolet, Herng Liu, J.W. Rogers · Chemistry of Materials · 1993 · 16 citations

Materials Science, Materials Engineering, Environmental Chemistry +15

Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)

Herng Liu, J.W. Rogers · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 14 citations

Aluminium Nitride, Engineering, Chemical Deposition +16