Md. Mahbub Satter

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Xiaohang Li, Theeradetch Detchprohm, Tsung‐Ting Kao et al. · Applied Physics Letters · 2014 · 88 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Tsung‐Ting Kao, Yuh‐Shiuan Liu et al. · Applied Physics Letters · 2013 · 86 citations

Aluminium Nitride, Engineering, Laser Material +16

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Suk Soon Choi, Mi‐Hee Ji, Jeomoh Kim et al. · Applied Physics Letters · 2012 · 84 citations

Wide-bandgap Semiconductor, White Oled, Electrical Engineering +14

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiaohang Li, Tsung‐Ting Kao, Md. Mahbub Satter et al. · Applied Physics Letters · 2015 · 60 citations · Full text

Aluminium Nitride, Engineering, Sapphire Substrate +17

Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

Xiaohang Li, Shuo Wang, Hongen Xie et al. · physica status solidi (b) · 2015 · 52 citations

Aluminium Nitride, Engineering, High‐quality Aln Layers +18