Donald A. Hitko - Concepedia

Author

Donald A. Hitko

HRL Laboratories (United States)

Also Known As

D. A. Hitko, D. Hitko, D.A. Hitko, Donald A. Hitko, Donald Hitko

Publications

331

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)University of California San Diego

About

Donald A. Hitko is an author at HRL Laboratories (United States) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	213
2	Electrical Engineering	9	9	155
3	Applied Physics	8	8	170
4	Computer Engineering	2	2	43
5	Materials Science	2	2	28

Donald A. Hitko

Publications

213

Citations

H-Index

Page 1

	Year	Citations
Four-element planar Butler matrix using half-wavelength open stubs Hitoshi Hayashi, Donald A. Hitko, C.G. Sodini IEEE Microwave and Wireless Components Letters Output PortsPhotonicsSimple DesignEngineeringPhysics	2002	58
A low power (45mW/latch) static 150GHz CML divider Donald A. Hitko, T. Hussain, J.F. Jensen, Low-power ElectronicsLow PowerElectrical EngineeringAggressive Heat ManagementEngineering	2004	33
Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technology J.C. Li, Y. Royter, Pamela Patterson, EngineeringDevice IntegrationIntegrated CircuitsHeterogeneous Wafer-scale IntegrationInp Dhbts	2008	27
InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers M. Sokolich, M.Y. Chen, R. Rajavel, IEEE Journal of Solid-State Circuits EngineeringRegrown Device LayersIntegrated CircuitsQuasi-planar Hbt ProcessInterconnect (Integrated Circuits)	2004	18
Effects of device design on the thermal properties of InP-based HBTs J.C. Li, P.M. Asbeck, M. Sokolich, EngineeringThermal ConductivitySemiconductor DeviceInp-based HbtsRf Semiconductor	2004	16
A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) J.C. Li, M. Chen, Donald A. Hitko, IEEE Electron Device Letters Intrinsic CollectorEngineeringIntegrated CircuitsSemiconductor DeviceQuantum Engineering	2005	16
First demonstration of sub-0.25μm-width emitter InP-DHBTs with &lt;400 GHz f/sub t/ and &lt;400 GHz f/sub max/ T. Hussain, Y. Royter, Donald A. Hitko, Low-power ElectronicsGhz F/sub Max/Electrical EngineeringEngineeringRf Semiconductor	2005	12
Characterization and modeling of thermal effects in sub-micron InP DHBTs J. Chingwei Li, T. Hussain, Donald A. Hitko, EngineeringSemiconductor DeviceAdvanced Packaging (Semiconductors)NanoelectronicsThermal Analysis	2005	12
Dense heterogeneous integration for InP Bi-CMOS technology Y. Royter, Pamela Patterson, J.C. Li, Advanced PackagingElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Device Integration	2009	11
Non-Foster Circuit Adaptation for Stable Broadband Operation Zhiwei Xu, Carson R. White, M.W. Yung, IEEE Microwave and Wireless Components Letters Near Field CommunicationEngineeringMicrowave TransmissionAnalog DesignSmart Antenna	2012	10

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