Gabriele Formicone

Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations

H. Brech, W. Brakensiek, D. Burdeaux et al. · 2004 · 33 citations

Low-power Electronics, Frequency Band, Electrical Engineering +12

Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

Gabriele Formicone, Marco Saraniti, Dragica Vasileska et al. · IEEE Transactions on Electron Devices · 2002 · 24 citations

Engineering, Nm Nmosfet, Ensemble Monte Carlo +16

A study for achieving high power and efficiency based on high bias operation in C- and X-band GaN power amplifiers

Gabriele Formicone, Jeff Burger, James Custer et al. · 2018 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Technology +15

Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate

Gabriele Formicone, Dragica Vasileska, D. K. Ferry · Solid-State Electronics · 1997 · 22 citations

Engineering, Physics, Surface Science +9

RF-LDMOS: a device technology for high power RF infrastructure applications

W. Burger, H. Brech, D. Burdeaux et al. · 2005 · 17 citations

Low-power Electronics, Electrical Engineering, Dominant Device Technology +10