Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

C.V. Falub, H. von Känel, Fabio Isa, +7

Science

EngineeringSige CrystalsSilicon On InsulatorSemiconductor NanostructuresSemiconductors +14

Faceting of Equilibrium and Metastable Nanostructures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes

Marco Salvalaglio, Rainer Backofen, Roberto Bergamaschini, +2

Crystal Growth & Design

EngineeringNanostructured SurfaceMaterial SimulationSoft MatterEquilibrium Crystal Shapes +14

Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Roberto Bergamaschini, Fabio Isa, C.V. Falub, +5

Surface Science Reports

EngineeringPhysicsSelf-aligned GeApplied PhysicsSemiconductor Device Fabrication +5

Ge Crystals on Si Show Their Light

Fabio Pezzoli, Fabio Isa, Giovanni Isella, +8

Physical Review Applied

Ge CrystalsEngineeringCrystal Growth TechnologyLuminescent GlassOptoelectronic Devices +16

Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires

Marco Albani, Simone Assali, Marcel A. Verheijen, +5

Nanoscale

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, +7

Physical Review Materials

Homoepitaxial Gaas FinsEngineeringGrowth ModelCrystal Growth TechnologyBiomedical Engineering +17

Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates

Roberto Bergamaschini, J. Tersoff, Y. Tu, +3

Physical Review Letters

Materials ScienceEngineeringPhysicsAnomalous SmoothingContinuum Simulations +10

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Marco Albani, Roberto Bergamaschini, Marco Salvalaglio, +3

physica status solidi (b)

EngineeringCrystal Growth TechnologyMolecular DynamicsEquilibrium Crystal ShapeThermodynamics +17

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Roberto Bergamaschini, Marco Salvalaglio, Rainer Backofen, +2

Advances in Physics X

Semiconductor EpitaxyEngineeringSemiconductor NanostructuresSemiconductorsNanoelectronics +15

Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si

Marco Salvalaglio, Roberto Bergamaschini, Fabio Isa, +9

ACS Applied Materials & Interfaces

Si PillarsEngineeringGe MicrostructuresThin Film Process TechnologySilicon On Insulator +20