Anbarasu Manivannan - Concepedia

Author

Anbarasu Manivannan

Indian Institute of Technology Indore ORCID

Also Known As

Anbarasu Manivannan, M Anbarasu, M. Anbarasu, Manivannan Anbarasu

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Indian Institute of Technology Indore Indian Institute of Technology Madras UGC DAE Consortium for Scientific Research Indian Institute of Science Education and Research, Bhopal Indian Institute of Science Bangalore

About

Anbarasu Manivannan is an author at Indian Institute of Technology Indore specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	299
2	Applied Physics	12	12	209
3	Electrical Engineering	4	4	69
4	Natural Sciences	1	1	12
5	Computer Engineering	1	1	18

Anbarasu Manivannan

Publications

508

Citations

H-Index

Page 1

	Year	Citations
Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices Nishant Saxena, Christoph Persch, Matthias Wuttig, Scientific Reports	2019	54
Microstructure, mechanical properties and shape memory behaviour of friction stir welded nitinol S.S. Mani Prabu, H.C. Madhu, Chandra S. Perugu, Materials Science and Engineering A Materials ScienceFriction WeldingEngineeringMechanical PropertiesWelding Process	2017	52
Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol S.S. Mani Prabu, H.C. Madhu, Chandra S. Perugu, Journal of Alloys and Compounds Materials ScienceShape Memory EffectFriction WeldingEngineeringWelding Process	2018	38
Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices Krishna Dayal Shukla, Nishant Saxena, Suresh Durai, Scientific Reports	2016	37
Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+:YAG nanosecond laser-textured Cu and Al sheets Y. Esther Blesso Vidhya, Arvind Pattamatta, Anbarasu Manivannan, Applied Surface Science Materials EngineeringMaterials ScienceAdvanced Laser ProcessingEngineeringSurface Science	2021	29
Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy Anbarasu Manivannan, Santosh Kumar Myana, Kumaraswamy Miriyala, Applied Physics Letters Energy-efficient Threshold SwitchingEngineeringEmerging Memory TechnologyVacuum DevicePhase Change Memory	2014	26
Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies Smriti Sahu, Anbarasu Manivannan, Habibuddin Shaik, Journal of Applied Physics Optical MaterialsLocal StructureEngineeringSolid-state ChemistryIst Materials	2017	21
Extremely High Contrast Multi-Level Resistance States of In<sub>3</sub>SbTe<sub>2</sub> Device for High Density Non-Volatile Memory Applications Shivendra Kumar Pandey, Anbarasu Manivannan physica status solidi (RRL) - Rapid Research Letters	2017	21
Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material Shivendra Kumar Pandey, Anbarasu Manivannan Scripta Materialia Materials ScienceMaterials EngineeringPhase-change MaterialEngineeringGlass Transition	2020	19
Direct evidence for phase transition in thin Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>7</sub> films using <i>in situ</i> UV–Vis–NIR spectroscopy and Raman scattering studies Smriti Sahu, Shivendra Kumar Pandey, Anbarasu Manivannan, physica status solidi (b) Optical MaterialsEngineeringThin Film Process TechnologyPhase Change MemorySpectroscopic Property	2016	18

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