H. Yoshihara

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 78 citations

Engineering, Computer Engineering, Computer Science +13

A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput

Wataru Otsuka, Koji Miyata, Makoto Kitagawa et al. · 2011 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 4.8GHz fully pipelined embedded SRAM in the streaming processor of a CELL processor

S.H. Dhong, Osamu Takahashi, M. White et al. · 2005 · 43 citations

Engineering, Computer Engineering, Electrical Engineering +16

Migration of Cell Broadband Engine from 65nm SOI to 45nm SOI

Osamu Takahashi, Charlotte Adams, D. Ault et al. · 2008 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +13

Low-Power Design Approach of 11FO4 256-Kbyte Embedded SRAM for the Synergistic Processor Element of a Cell Processor

T. Asano, J. A. Silberman, S.H. Dhong et al. · IEEE Micro · 2005 · 14 citations

Engineering, Computer Engineering, Computer Science +17