E. So

Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions

R. J. Meyer, C. B. Duke, A. Paton et al. · Physical review. B, Condensed matter · 1979 · 140 citations

Engineering, Electron Diffraction, Electronic Structure +16

Subsurface atomic displacements at the GaAs(110) surface

Antoine Kahn, E. So, Peter Mark et al. · Journal of Vacuum Science and Technology · 1978 · 66 citations

Engineering, Subsurface Atomic Displacements, Semiconductors +16

Surface and near-surface atomic structure of GaAs (110)

Antoine Kahn, E. So, Peter Mark et al. · Journal of Vacuum Science and Technology · 1978 · 64 citations

Semiconductors, Multiple Scattering, Engineering +14

Structure determination for the (110) surface of zincblende structure compound semiconductors

C. B. Duke, R. J. Meyer, A. Paton et al. · Journal of Vacuum Science and Technology · 1979 · 50 citations

Engineering, Chemistry, Model Surface +18

Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities

R. J. Meyer, C. B. Duke, A. Paton et al. · Physical review. B, Condensed matter · 1980 · 27 citations

Materials Science, Surface Structure, Top-layer Reconstructions +15