Sayed Ali Albahrani

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

Sayed Ali Albahrani, Dhawal Mahajan, Jason Hodges et al. · IEEE Transactions on Electron Devices · 2018 · 101 citations

Device Modeling, Electrical Engineering, Available Gan Hemt +13

Extreme Temperature Modeling of AlGaN/GaN HEMTs

Sayed Ali Albahrani, Dhawal Mahajan, Saleh Kargarrazi et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations · Full text

Device Modeling, Spice Model, Electrical Engineering +11

Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

Sayed Ali Albahrani, Lars Heuken, Dirk Schwantuschke et al. · IEEE Transactions on Electron Devices · 2020 · 20 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

A Novel Transistor Open-Circuit Fault Localization Scheme for Three-Phase Dual Active Bridge

Amirali Davoodi, Danial Sadeghpour, Muhammad Kashif et al. · 2018 · 16 citations

Electrical Engineering, Magnetic Inductance, Dual Active Bridge +2

Characterizing drain current dispersion in GaN HEMTs with a new trap model

Sayed Ali Albahrani, James G. Rathmell, Anthony E. Parker · 2009 · 12 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +15