Rachel Kahler

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) <b> <i>β</i> </b>-Ga2O3 epitaxial drift layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit et al. · Applied Physics Letters · 2024 · 29 citations · Full text

Engineering, Materials Engineering, Materials Science +17

500 °C operation of β-Ga2O3 field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy et al. · Applied Physics Letters · 2022 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Defect Engineering at the Al₂O₃/(010)<i>β</i>-Ga₂O₃Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

Ahmad E. Islam, Chenyu Zhang, Kursti DeLello et al. · IEEE Transactions on Electron Devices · 2022 · 21 citations

Engineering, Materials Engineering, Materials Science +17