J. H. M. Snijders

Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions

A. E. T. Kuiper, M. F. Gillies, V. Kottler et al. · Journal of Applied Physics · 2001 · 56 citations · Full text

Al Oxidation, Aluminium Nitride, Engineering +19

Etch and strip induced material modification of porous low-k (k=2.2) dielectric

Yuki Furukawa, R.A.M. Wolters, H.H.A.J. Roosen et al. · Microelectronic Engineering · 2004 · 31 citations

Materials Engineering, Materials Science, Porous Low-k +9

HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors

Z. M. Rittersma, F. Roozeboom, Marcel A. Verheijen et al. · Journal of The Electrochemical Society · 2004 · 29 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

The optimum oxidation state of AlO/sub x/ magnetic tunnel junctions

M. F. Gillies, W. Oepts, A. E. T. Kuiper et al. · IEEE Transactions on Magnetics · 1999 · 24 citations

Aluminium Nitride, Engineering, Oxidation Resistance +20

Physically trapped oxygen in sputter-deposited MoO3 films

T.J. Vink, Roy Verbeek, J. H. M. Snijders et al. · Journal of Applied Physics · 2000 · 22 citations

Engineering, Oxidation Resistance, Sputter-deposited Moo3 Films +13