In this paper, the effects of N ₂ O plasma treatment (PT) at various temperatures on the performances of InMgZnO (IMZO) thin-film transistors (TFTs) were investigated. As a result, the TFTs with N ₂ O plasma-treated (10 W) IMZO channel layers at 100° for 10 min showed five times higher linear field-effect mobility compared to the untreated IMZO. The N ₂ O PT did not cause any significant changes to the crystal structure, surface roughness of the IMZO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the oxygen-vacancy defect density of the channel layer decreases via the N ₂ O PT with temperature increased, and the reduction of oxygen vacancies leads to a decrease of off-current (I _OFF ). It was found out that the refractivity of the channel layer increases with PT temperature increased, and the improvement of the film density makes the on-current (I _ON ) higher, resulting in high mobility and high I _ON /I _OFF ratio. Our study suggests that moderate N ₂ O PT temperature can be adopted to improve the device performances.

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