Cristiano F. Gonçalves

An Accurate Characterization of Capture Time Constants in GaN HEMTs

João L. Gomes, Luís C. Nunes, Cristiano F. Gonçalves et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 56 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Quasi-Load Insensitive Doherty PA Using Supply Voltage and Input Excitation Adaptation

Cristiano F. Gonçalves, Filipe M. Barradas, Luís C. Nunes et al. · IEEE Transactions on Microwave Theory and Techniques · 2021 · 26 citations · Full text

Electrical Engineering, Engineering, Rf Semiconductor +6

Dynamic Supply Voltage Control for PA Output Power Correction Under Variable Loading Scenarios

Cristiano F. Gonçalves, Filipe M. Barradas, Luís C. Nunes et al. · IEEE Transactions on Microwave Theory and Techniques · 2020 · 24 citations · Full text

Variable Loading Scenarios, Electrical Engineering, Engineering +15

Pulsed <i>I</i>/<i>V</i> and <i>S</i>-parameters measurement system for isodynamic characterization of power GaN HEMT transistors

Cristiano F. Gonçalves, Luís C. Nunes, Pedro M. Cabral et al. · International Journal of RF and Microwave Computer-Aided Engineering · 2018 · 18 citations

Switch-Based Variable Length Stubs Network for PA Load Sensitivity Reduction

Cristiano F. Gonçalves, Filipe M. Barradas, Pedro M. Cabral et al. · IEEE Access · 2019 · 18 citations · Full text

Electrical Engineering, Engineering, Circuit System +10