João L. Gomes

An Accurate Characterization of Capture Time Constants in GaN HEMTs

João L. Gomes, Luís C. Nunes, Cristiano F. Gonçalves et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 56 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers

João L. Gomes, Luís C. Nunes, Filipe M. Barradas et al. · IEEE Transactions on Microwave Theory and Techniques · 2021 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers

Pedro M. Tome, Filipe M. Barradas, Luís C. Nunes et al. · IEEE Transactions on Microwave Theory and Techniques · 2020 · 20 citations

Device Modeling, Electrical Engineering, Gan Hemt-based Pas +14

A Simple Method to Extract Trapping Time Constants of GaN HEMTs

Luís C. Nunes, João L. Gomes, Pedro M. Cabral et al. · 2018 · 18 citations

Wide-bandgap Semiconductor, Engineering, Measurement +17