Kenta Okumura

Gas-source molecular beam epitaxy and luminescence characterization of strained Si1−xGex/Si quantum wells

S. Fukatsu, Noritaka Usami, Yasuyuki Kato et al. · Journal of Crystal Growth · 1994 · 41 citations

Physics, Applied Physics, Luminescence Characterization +3

Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

Jiejun Wu, Kazukeru Okuura, Kohei Fujita et al. · Journal of Crystal Growth · 2009 · 26 citations

Materials Science, Materials Engineering, Aluminium Nitride +11

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Takuya Nomura, Kenta Okumura, Hideto Miyake et al. · Journal of Crystal Growth · 2011 · 25 citations

Materials Engineering, Materials Science, Aluminium Nitride +6

HVPE growth of AlN on trench‐ patterned 6H‐SiC substrates

Kenta Okumura, Takuya Nomura, Hideto Miyake et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 12 citations

Materials Science, Materials Engineering, Patterned Sic +13

In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy

Jiejun Wu, Kazuteru Okuura, Kenta Okumura et al. · Journal of Crystal Growth · 2009 · 10 citations

Materials Science, Aluminium Nitride, Engineering +6