M. Gallant

Infrared reflectivity probing of thermal and spatial properties of laser-generated carriers in germanium

M. Gallant, H. M. van Driel · Physical review. B, Condensed matter · 1982 · 92 citations

Engineering, Laser Science, Laser Applications +18

Long minority hole diffusion length and evidence for bulk radiative recombination limited lifetime in InP/InGaAs/InP double heterostructures

M. Gallant, A. Zemel · Applied Physics Letters · 1988 · 58 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Metalorganic chemical vapor deposition InGaAs <i>p</i>-<i>i</i>-<i>n</i> photodiodes with extremely low dark current

M. Gallant, N. Puetz, A. Zemel et al. · Applied Physics Letters · 1988 · 34 citations

Engineering, Low Dark, Optoelectronic Devices +18

Metalorganic chemical-vapour-deposition growth and characterization of GaAs

C. Blaauw, C. J. Miner, B. Emmerstorfer et al. · Canadian Journal of Physics · 1985 · 29 citations

Semiconductors, Semiconductor Technology, Gaas Epitaxial Layers +10

Current-voltage characteristics of metalorganic chemical vapor deposition InP/InGaAs <i>p</i>-<i>i</i>-<i>n</i> photodiodes: The influence of finite dimensions and heterointerfaces

A. Zemel, M. Gallant · Journal of Applied Physics · 1988 · 25 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +19