L. Dózsa

Statistics

Publications

Citations

524

H-Index

Active since

1970

Affiliations

Institute for Technical Physics and Materials Science(Current)

Hungarian Academy of Sciences

Aristotle University of Thessaloniki

University of Debrecen

Far Eastern Branch of the Russian Academy of Sciences

L. Dózsa is an author at Institute for Technical Physics and Materials Science specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringChemistryMaterial SciencePhysicsSemiconductorsNanotechnologyNanoelectronicsSurface Science

Publications per year

1970–2012

Publications

Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures

C.A. Dimitriadis, P. A. Coxon, L. Dózsa et al. · IEEE Transactions on Electron Devices · 1992 · 115 citations

Materials Science, Electrical Engineering, Polysilicon Films +14

Evaluation of InP-to-silicon heterobonding

Donato Pasquariello, Martin Camacho, Klas Hjort et al. · Materials Science and Engineering B · 2001 · 34 citations

Wafer Scale Processing, Engineering, Semiconductor Device Fabrication +2

Kinetics of the reaction of pentacyanonitrosylferrate(II) with aliphatic amines

L. Dózsa, V. Kormos, Mihály T. Beck · Inorganica Chimica Acta · 1984 · 31 citations

Engineering, Chemical Transformation, Organic Chemistry +4

Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots

N. A. Hastas, C.A. Dimitriadis, L. Dózsa et al. · Journal of Applied Physics · 2003 · 24 citations

Categoryquantum Electronics, Engineering, Semiconductor Physics +17

Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique

N. A. Hastas, C.A. Dimitriadis, L. Dózsa et al. · Journal of Applied Physics · 2004 · 23 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Rows per page

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