P. Capezzuto - Concepedia

Author

P. Capezzuto

University of Bari Aldo Moro

Also Known As

Capezzuto Pio, Esposito, S., Golic, P Capezzuto, P. Capezzuto, Pio Capezzuto

195

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

University of Bari Aldo Moro Institute of Inorganic Methodologies and Plasmas Istituto di Nanotecnologia University of Catania Georgia Institute of Technology

About

P. Capezzuto is an author at University of Bari Aldo Moro specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	89	3.4K
2	Applied Physics	31	77	2.7K
3	Natural Sciences	12	15	497
4	Medicine	1	1	23
5	Biostatistics	1	1	25

P. Capezzuto

101

Publications

3.8K

Citations

H-Index

Page 1

	Year	Citations
Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure María Losurdo, Maria M. Giangregorio, P. Capezzuto, Physical Chemistry Chemical Physics Materials ScienceGraphene Cvd GrowthChemical EngineeringGraphene NanomeshesEngineering	2011	454
Raman scattering from small particle size polycrystalline silicon Zafar Iqbal, S. Vepřek, A.P. Webb, Solid State Communications EngineeringNanomaterialsNanotechnologyOptical PropertiesSurface-enhanced Raman Scattering	1981	324
Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption S. Vepřek, Zafar Iqbal, Rinaldo Kühne, Journal of Physics C Solid State Physics Materials SciencePt.iii See Ibid.EngineeringElectron Spin DensityPhysics	1983	120
Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance María Losurdo, Maria M. Giangregorio, Giuseppe Valerio Bianco, Solar Energy Materials and Solar Cells PlasmonicsEngineeringNanomaterialsNanotechnologyApplied Physics	2009	93
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics Gon Namkoong, W. Alan Doolittle, April S. Brown, Journal of Applied Physics Materials ScienceN Plasma RadicalsEngineeringNitridation TemperatureCrystalline Defects	2002	86
Parametrization of optical properties of indium–tin–oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity María Losurdo, Maria M. Giangregorio, P. Capezzuto, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Optical MaterialsEngineeringOptoelectronic DevicesThin Film Process TechnologyOptical Characterization	2002	71
Optically transparent microwave screens based on engineered graphene layers Marco Grande, Giuseppe Valerio Bianco, M. A. Vincenti, Optics Express Materials ScienceTransparent Microwave ScreensElectrical EngineeringOptical MaterialsEngineering	2016	67
Contribution of vibrational excitation to the rate of carbon dioxide dissociation in electrical discharges P. Capezzuto, F. Cramarossa, Riccardo d’Agostino, The Journal of Physical Chemistry Electrical EngineeringEngineeringPhysicsElectrical DischargesNatural Sciences	1976	62
rf glow discharge of SiF4-H2 mixtures: Diagnostics and modeling of the <i>a</i>-Si plasma deposition process Giovanni Bruno, P. Capezzuto, G. Cicala Journal of Applied Physics Optical MaterialsEngineeringGlow DischargePlasma PhysicsChemistry	1991	60
Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs: An<i>in situ</i>real-time ellipsometric study María Losurdo, P. Capezzuto, Giovanni Bruno, Physical review. B, Condensed matter	1998	58

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