Concepedia
Statistics
Publications
26
Citations
567
H-Index
14
Active since
1976
Affiliations
University of Parma(Current)
Telecom Italia Lab
Leonardo (Italy)
University of Padua
P. Fṙanzosi is an author at University of Parma specializing in engineering, applied physics, and physics.
Top concepts
EngineeringApplied PhysicsMaterial SciencePhysicsCrystallographyCondensed Matter PhysicsSemiconductorsOptical PropertiesNatural SciencesCrystalline Defects
Publications per year
1976–1996
On the mechanisms of strain release in molecular-beam-epitaxy-grown In<i>x</i>Ga1−<i>x</i>As/GaAs single heterostructures
A. V. Drigo, A. Carnera, F. Genova et al. · Journal of Applied Physics · 1989 · 117 citations
Semiconductors, Materials Science, Layer Thickness +14
Raman scattering study of residual strain in GaAs/InP heterostructures
G. Attolini, L. Francesio, P. Fṙanzosi et al. · Journal of Applied Physics · 1994 · 45 citations
Materials Science, Semiconductors, Raman Spectroscopy Study +12
A study of microdefects in n-type doped gaAs crystals using Cathodoluminescence and x-ray techniques
R. Fornari, P. Fṙanzosi, G. Salviati et al. · Journal of Crystal Growth · 1985 · 35 citations
Materials Science, Photoluminescence, Engineering +3
The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructures
G. Timoò, C. Flores, B. Bollani et al. · Journal of Crystal Growth · 1992 · 35 citations
Gaas/ge Heterostructures, Physics, Growth Rate +5
Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction
C. Bocchi, C. Ferrari, P. Fṙanzosi et al. · Journal of Crystal Growth · 1993 · 29 citations
Ii-vi Semiconductor, Engineering, Physics +9
1–5 of 26