Shanjie Li

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Nengtao Wu, Zhiheng Xing, Shanjie Li et al. · Semiconductor Science and Technology · 2023 · 50 citations

Gan-based Hemts, Gan-based Power Hemts, Electrical Engineering +14

Memtransistors Based on Non-Layered In₂S₃ Two-Dimensional Thin Films With Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

Yu Zhao, Daizhe Yu, Zhen Liu et al. · IEEE Access · 2020 · 32 citations · Full text

Optical Materials, Engineering, Emerging Memory Technology +22

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

Shanjie Li, Zhiyuan He, Rui Gao et al. · IEEE Transactions on Electron Devices · 2020 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH₃ Plasma Pretreatment

Nengtao Wu, Ling Luo, Zhiheng Xing et al. · IEEE Transactions on Electron Devices · 2023 · 20 citations

Nh3 Plasma, Wide-bandgap Semiconductor, Electrical Engineering +10

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Shanjie Li, Zhiyuan He, Rui Gao et al. · Journal of Physics D Applied Physics · 2019 · 13 citations