Eui Joong Shin

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO₂ With Record-Low Leakage Current

Tae In Lee, Hyun Jun Ahn, Min Ju Kim et al. · IEEE Electron Device Letters · 2019 · 30 citations

Semiconductor Technology, Gate Stack, Electrical Engineering +12

Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

Eui Joong Shin, Sung Won Shin, Seung Hwan Lee et al. · 2020 · 22 citations

Non-volatile Memory, Electrical Engineering, Engineering +12

A Novel Split-Gate Ferroelectric FET for a Compact and Energy Efficient Neuron

Gyusoup Lee, Hyung Jin Kim, Eui Joong Shin et al. · IEEE Electron Device Letters · 2022 · 17 citations

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Min Ju Kim, Changhyeon Lee, Eui Joong Shin et al. · Advanced Functional Materials · 2021 · 13 citations

Hybrid Dielectric Stacks, Engineering, Organic Electronics +17

Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell

Eui Joong Shin, Gyusoup Lee, Seongho Kim et al. · IEEE Electron Device Letters · 2023 · 13 citations