Changjoon Yoon

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-<i>k</i>Al₂O₃gate layers

Dong‐Hyuk Yeom, Kihyun Keem, Jeongmin Kang et al. · Nanotechnology · 2008 · 33 citations

Semiconductors, Identical Fets, Electrical Engineering +11

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al₂O₃gate oxides

Dong‐Hyuk Yeom, Jeongmin Kang, Myoung-Won Lee et al. · Nanotechnology · 2008 · 28 citations

Materials Science, Non-volatile Memory, Electrical Engineering +13

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem, Jeongmin Kang, Changjoon Yoon et al. · Microelectronic Engineering · 2007 · 26 citations

Photolithography Process, Electrical Engineering, Engineering +7

Enhanced Performance of ZnO Nanowire Field Effect Transistors by H₂ Annealing

Kihyun Keem, Jeongmin Kang, Changjoon Yoon et al. · Japanese Journal of Applied Physics · 2007 · 16 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

Changjoon Yoon, Gyoujin Cho, Sangsig Kim · IEEE Transactions on Electron Devices · 2011 · 13 citations

Engineering, Optoelectronic Devices, Gaas Nanowire +16