O. S. Komkov - Concepedia

Author

O. S. Komkov

Saint Petersburg State Electrotechnical University ORCID

Also Known As

Komkov O. S., Komkov, Oleg, O S Komkov, O. S. Komkov, O.S. Komkov, Oleg Komkov, Oleg S. Komkov, Oleg Sergeevich Komkov, О. С. КОМКОВ, О.С. Комков

Publications

437

Citations

H-Index

Concepts

All Affiliations

Saint Petersburg State Electrotechnical University Ioffe Institute Institute of Semiconductor Physics Russian Academy of Sciences

About

O. S. Komkov is an author at Saint Petersburg State Electrotechnical University specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	122
2	Applied Physics	7	7	122
3	Materials Science	5	5	86
4	Electrical Engineering	3	3	55
5	Materials Engineering	1	1	10

O. S. Komkov

Publications

272

Citations

H-Index

Page 1

	Year	Citations
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates S. V. Sorokin, Pavel Avdienko, I. V. Sedova, Materials	2020	29
Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range D. D. Firsov, O. S. Komkov, P. S. Kop’ev, Journal of Physics D Applied Physics Insb ThicknessEngineeringInsb/inas NanostructuresInsb InsertionsOptoelectronic Devices	2016	28
Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method D. D. Firsov, O. S. Komkov Technical Physics Letters	2013	23
Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters S. V. Ivanov, M. Yu. Chernov, P. N. Brunkov, Progress in Crystal Growth and Characterization of Materials Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideMetamorphic Inas	2018	22
Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells A. N. Pikhtin, O. S. Komkov, K. V. Bazarov Semiconductors	2006	19
InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm M. Yu. Chernov, O. S. Komkov, D. D. Firsov, Journal of Crystal Growth Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2017	19
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration D. S. Abramkin, E. A. Emelyanov, O. S. Komkov, Nanomaterials	2022	17
Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov, Applied Physics Express µM PhotoluminescenceOptical MaterialsEngineeringMetamorphic Insb/inas/inOptoelectronic Devices	2017	16
Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique O. S. Komkov, A. N. Pikhtin, Yu. V. Zhilyaev, Technical Physics Letters	2008	15
Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures O. S. Komkov, D. D. Firsov, M. Yu. Chernov, Journal of Physics D Applied Physics EngineeringResidual Strain EngineeringOptoelectronic DevicesIntegrated CircuitsSemiconductor Nanostructures	2017	14

Page 1