G. Regula

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

M.G. Tsoutsouva, T. Riberi – Béridot, G. Regula et al. · Acta Materialia · 2016 · 66 citations · Full text

Engineering, Materials Engineering, Materials Science +17

30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC

Hosni Idrissi, B. Pichaud, G. Regula et al. · Journal of Applied Physics · 2007 · 39 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

{1 1 1} facet growth laws and grain competition during silicon crystallization

Vasiliki Stamelou, M.G. Tsoutsouva, Thècle Riberi‐Béridot et al. · Journal of Crystal Growth · 2017 · 31 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Study of Shockley partial dislocation mobility in highly N‐doped 4H‐SiC by cantilever bending

Hosni Idrissi, G. Regula, M. Lancin et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 23 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Dynamic observation of dislocation evolution and interaction with twin boundaries in silicon crystal growth using in – situ synchrotron X-ray diffraction imaging

M.G. Tsoutsouva, G. Regula, Birgit Ryningen et al. · Acta Materialia · 2021 · 23 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17