H. Stuchlı́ková - Concepedia

Author

H. Stuchlı́ková

FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic

Also Known As

H Stuchlíková, H Stuchlı́ková, H. Stuchlikova, H. Stuchlíková, H. Stuchlı́ková, HA Stuchlíková, Ha Stuchlikova, Ha Stuchlíková, Ha Stuchlı́ková, Ha The Stuchlikova

Publications

530

Citations

H-Index

Concepts

All Affiliations

FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic Czech Academy of Sciences

About

H. Stuchlı́ková is an author at FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	412
2	Applied Physics	13	14	380
3	Materials Science	10	10	222
4	Electrical Engineering	2	2	43
5	Materials Engineering	2	2	33

H. Stuchlı́ková

Publications

412

Citations

H-Index

Page 1

	Year	Citations
Basic features of transport in microcrystalline silicon J. Kočka, A. Fejfar, H. Stuchlı́ková, Solar Energy Materials and Solar Cells EngineeringPhysicsMicrofabricationApplied PhysicsTransport Phenomena	2003	61
Model of transport in microcrystalline silicon J. Kočka, H. Stuchlı́ková, J. Stuchlı́k, Journal of Non-Crystalline Solids EngineeringPhysicsApplied PhysicsTransport PhenomenaSemiconductor Device Fabrication	2002	46
Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length Vladimír Švrček, I. Pelant, J. Kočka, Journal of Applied Physics EngineeringTransport AnisotropyAmbipolar Diffusion LengthOptoelectronic DevicesThin Film Process Technology	2001	32
Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon—review of typical features J. Kočka, T. Mates, H. Stuchlı́ková, Thin Solid Films Materials ScienceGrain BoundariesEngineeringCrystalline DefectsGrain Growth	2005	32
The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon J. Kočka, A. Fejfar, T. Mates, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics EngineeringIntegrated CircuitsThin Film Process TechnologySilicon On InsulatorGrain Size	2004	30
Microcrystalline Silicon - Relation of Transport Properties and Microstructure J. Kočka, A. Fejfar, V. Vorlı́ček, MRS Proceedings Materials ScienceEngineeringMicrofabricationApplied PhysicsTransport Phenomena	1999	27
The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition Jiří Červenka, Martin Ledinský, J. Stuchlı́k, Nanotechnology Crystal StructureSilicon NanowiresEngineeringVacuum DeviceSilicon On Insulator	2010	25
On the transport properties of microcrystalline silicon A. Fejfar, N. Beck, H. Stuchlı́ková, Journal of Non-Crystalline Solids EngineeringPhysicsMicrofabricationApplied PhysicsTransport Phenomena	1998	23
Amorphous/microcrystalline silicon superlattices—the chance to control isotropy and other transport properties J. Kočka, J. Stuchlı́k, H. Stuchlı́ková, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringPure Microcrystalline Silicon	2001	22
New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flight G. Juška, Kristijonas Genevičius, M. Viliūnas, Journal of Non-Crystalline Solids Electrical EngineeringEngineeringAerospace EngineeringSilicon On InsulatorTransport Phenomena	2000	21

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