V. I. Kopchatov

Gain characteristics of quantum dot injection lasers

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov et al. · Semiconductor Science and Technology · 1999 · 98 citations

Engineering, Electrical Engineering, Materials Science +16

Low threshold quantum dot injection laseremitting at 1.9 µm

V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov et al. · Electronics Letters · 1998 · 72 citations

Engineering, Electrical Engineering, Materials Science +14

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov et al. · Journal of Electronic Materials · 1998 · 39 citations

Engineering, Electrical Engineering, Materials Science +16

Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (J_th=11 A/cm², λ=1.9 µm (77 K))

N. Yu. Gordeev, V. I. Kopchatov, V. M. Ustinov et al. · Japanese Journal of Applied Physics · 1999 · 30 citations

Engineering, Electrical Engineering, Materials Science +14

Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High Internal Quantum Efficiency

N. Yu. Gordeev, V. I. Kopchatov, V. M. Ustinov et al. · Japanese Journal of Applied Physics · 1997 · 15 citations

Engineering, Electrical Engineering, Materials Science +17