Keisuke Ide - Concepedia

Author

Keisuke Ide

Tokyo Institute of Technology ORCID

Also Known As

Ide, Keisuke, K. IDE, K. Ide, Keisuke IDE, Keisuke Ide

101

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology National Institute for Materials Science Japan Synchrotron Radiation Research Institute SPring-8 Japan Science and Technology Agency

About

Keisuke Ide is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	22	1K
2	Applied Physics	16	19	898
3	Natural Sciences	2	2	35
4	Chemistry	2	2	34
5	Public Health	1	1	13

Keisuke Ide

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Keisuke Ide, Y. Kikuchi, Kenji Nomura, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringElectronic MaterialsCrystalline Defects	2011	252
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, NPG Asia Materials Wide-bandgap SemiconductorEngineeringThin Film Process TechnologySemiconductorsCrystalline Gallium Oxide	2017	123
Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyThin Film Process TechnologyFilm Densification	2012	110
Dynamically Reconfigurable Processor Implemented with IPFlex's DAPDNA Technology Takayuki Sugawara, Keisuke Ide, Tomoyoshi Sato IEICE Transactions on Information and Systems Hardware ArchitectureEngineeringDapdna TechnologyComputer EngineeringComputer Architecture	2004	70
Shallow Valence Band of Rutile GeO<sub>2</sub> and P-type Doping Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, The Journal of Physical Chemistry C	2020	56
Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors Keisuke Ide, Y. Kikuchi, Kenji Nomura, Thin Solid Films Materials ScienceLow-temperature OzoneElectrical EngineeringEngineeringOxide Electronics	2011	43
Multiple Roles of Hydrogen Treatments in Amorphous In–Ga–Zn–O Films Haochun Tang, Yosuke Kishida, Keisuke Ide, ECS Journal of Solid State Science and Technology Materials ScienceMaterials EngineeringHydrogen TreatmentsEngineeringCrystalline Defects	2017	42
Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Journal of Applied Physics Materials ScienceMaterials EngineeringResidual Hydrogen/h2oEngineeringCrystalline Defects	2015	41
Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Applied Physics Letters Materials ScienceSemiconductorsBasno3 Thin FilmsInterstitial HydrogenEngineering	2016	36
Visible and infrared electroluminescence from an Er‐doped n‐ZnO/p‐Si light emitting diode Susumu Harako, Satoshi Yokoyama, Keisuke Ide, physica status solidi (a) EngineeringOptoelectronic DevicesLuminescence PropertyEr‐contained Zno TargetSemiconductors	2008	35

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