N. Van den Bogaert - Concepedia

Author

N. Van den Bogaert

UCLouvain

Also Known As

N Van den Bogaert, N. Van Den Bogaert, N. Van den Bogaert, N. van den Bogaert, Nathalie Van den Bogaert

Publications

247

Citations

H-Index

Concepts

All Affiliations

UCLouvain

About

N. Van den Bogaert is an author at UCLouvain specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	228
2	Applied Physics	7	7	216
3	Materials Science	4	4	75
4	Natural Sciences	3	3	127
5	Materials Engineering	1	1	14

N. Van den Bogaert

Publications

228

Citations

H-Index

Page 1

	Year	Citations
Dynamic global simulation of the Czochralski process I. Principles of the method N. Van den Bogaert, F. Dupret Journal of Crystal Growth Numerical AnalysisEngineeringPhysicsProcess Simulation ModelNatural Sciences	1997	65
Dynamic global simulation of the Czochralski process II. Analysis of the growth of a germanium crystal N. Van den Bogaert, F. Dupret Journal of Crystal Growth Materials ScienceCzochralski Process IiEngineeringPhysicsCrystal Material	1997	35
Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection R. Assaker, N. Van den Bogaert, F. Dupret Journal of Crystal Growth EngineeringTime-dependent SimulationPhysicsLarge Silicon CrystalsNatural Sciences	1997	35
Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth Yoan Collet, Olivier Magotte, N. Van den Bogaert, Journal of Crystal Growth MagnetismSpintronicsFerromagnetismEngineeringEffective Simulation	2011	27
Transient computer simulation of a CZ crystal growth process E. Dornberger, Wilfried von Ammon, N. Van den Bogaert, Journal of Crystal Growth EngineeringCrystal Growth TechnologyMaterial SimulationNumerical SimulationApplied Physics	1996	26
Simulation of back-melting in Czochralski growth N. Van den Bogaert, F. Dupret Journal of Crystal Growth Materials ScienceEngineeringCrystal MaterialCrystal Growth TechnologyApplied Physics	1996	14
Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion Nicolas Van Goethem, A. de Potter, N. Van den Bogaert, Journal of Physics and Chemistry of Solids Materials ScienceMaterials EngineeringPoint DefectsEngineeringPhysics	2007	14
A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation S. Gondet, Thierry Duffar, F. Louchet, Journal of Crystal Growth Materials ScienceVisco-plastic ModelEngineeringSevere Plastic DeformationStrain Localization	2003	12

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