S. B. Hyder - Concepedia

Author

S. B. Hyder

Varian Medical Systems (United States)

Also Known As

D.R. Decker, Hyder,S B, S. B. HYDER, S. B. Hyder, S. Hyder, S.B. Hyder, Syed B. Hyder, Syed Bilal Hyder

Publications

471

Citations

H-Index

Concepts

All Affiliations

Varian Medical Systems (United States)

About

S. B. Hyder is an author at Varian Medical Systems (United States) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	415
2	Applied Physics	13	18	415
3	Electrical Engineering	9	9	221
4	Chemistry	4	4	80
5	Natural Sciences	1	1	22

S. B. Hyder

Publications

443

Citations

H-Index

Page 1

	Year	Citations
Saturation velocity determination for In0.53Ga0.47As field-effect transistors S. Bandy, C. Nishimoto, S. B. Hyder, Applied Physics Letters Saturation Velocity DeterminationSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	1981	65
Structure and Properties of Boron Nitride Films Grown by High Temperature Reactive Plasma Deposition S. B. Hyder, T. O. Yep Journal of The Electrochemical Society Materials ScienceMaterials EngineeringBoron NitrideEngineeringHexagonal Boron Nitride	1976	50
Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application S. B. Hyder, R. R. Saxena, S. H. Chiao, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic Devices	1979	32
Field-assisted photoemission to 2.1 microns from a Ag/<i>p</i>-In0.77Ga0.23As photocathode P. E. Gregory, J. S. Escher, R. R. Saxena, Applied Physics Letters PhotonicsElectrical EngineeringOptical MaterialsReflection-mode PhotoemissionEngineering	1980	29
Trapping effects in silver-doped mercuric iodide crystals S. B. Hyder Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologySolid-state ChemistryOptoelectronic Devices	1977	26
Substrate dependence of InP m.e.s.f.e.t. performance H. Morkoç̌, James T. Andrews, S. B. Hyder Electronics Letters SemiconductorsSemiconductor TechnologyEpitaxial GrowthEngineeringEpitaxial Films	1978	22
Liquid-phase-epitaxial growth of lattice-matched In0.53Ga0.47As on (100) -oriented InP S. B. Hyder, G. A. Antypas, J. S. Escher, Applied Physics Letters Materials ScienceInp/in0.53ga0.47as/inp Heterojunction StructuresLiquid-phase EpitaxyOptical MaterialsEngineering	1977	22
Vapor phase epitaxial growth of InP-based compound semiconductor materials S. B. Hyder Journal of Crystal Growth Materials EngineeringSemiconductorsMaterials ScienceEngineeringApplied Physics	1981	21
Field-assisted minority carrier electron transport across a <i>p</i>-InGaAs/<i>p</i>-InP heterojunction P. E. Gregory, J. S. Escher, S. B. Hyder, Journal of Vacuum Science and Technology EngineeringField-assisted PhotocathodeOptoelectronic DevicesCharge TransportSemiconductors	1978	20
Quantum efficiency of InP field-assisted photocathodes Timothy J. Maloney, M G Burt, J. S. Escher, Journal of Applied Physics PhotonicsElectrical EngineeringReflection-mode Quantum EfficienciesP-inp Bias-assisted PhotoemitterEngineering	1980	19

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