Atsushi Okuyama

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Active since

2006

Affiliations

Atsushi Okuyama is an author at Tokyo Electron (Japan) specializing in non-volatile memory design, dynamic random-access memory design, and semiconductor devices.

Publications per year

2006–2014

Publications

Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region

Atsushi Okuyama, Suguru Saito, Yoshiya Hagimoto et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2014 · 12 citations

Engineering, Materials Engineering, Materials Science +16

Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory

Takashi Ando, Naoyuki Sato, S. Hiyama et al. · Japanese Journal of Applied Physics · 2006 · 10 citations

Engineering, Materials Engineering, Materials Science +14

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