Yoshisato Yokoyama - Concepedia

Author

Yoshisato Yokoyama

Tokyo Institute of Technology ORCID

Also Known As

Y Yokoyama, Y. Yokoyama, Yokoyama, Y., Yoshihiro YOKOYAMA, Yoshisato Yokoyama

Publications

238

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology Renesas Electronics (Japan)Kyoto University Shizuoka University Kyoto University Research Reactor Institute

About

Yoshisato Yokoyama is an author at Tokyo Institute of Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	144
2	Electrical Engineering	4	4	108
3	Chemical Engineering	2	2	36
4	Materials Science	2	2	36
5	Antenna	1	1	14

Yoshisato Yokoyama

Publications

181

Citations

H-Index

Page 1

	Year	Citations
On-Chip Variable Inductor Using Microelectromechanical Systems Technology Yoshisato Yokoyama, Takashi Fukushige, Seiichi Hata, Japanese Journal of Applied Physics Low-power ElectronicsElectrical EngineeringEngineeringThree-dimensional Spiral InductorAdvanced Packaging (Semiconductors)	2003	42
Fabrication and evaluation of an on-chip micro-variable inductor Takashi Fukushige, Yoshisato Yokoyama, Seiichi Hata, Microelectronic Engineering Electrical EngineeringEngineeringMicrofabricationElectronic PackagingPower Electronics	2003	27
Variable RF Inductor on Si CMOS Chip Hirotaka Sugawara, Yoshisato Yokoyama, Shinichiro Gomi, Japanese Journal of Applied Physics Electrical EngineeringEngineeringRadio FrequencyHigh-frequency DeviceInductance Value	2004	25
Effect of water vapor on tritium release from ceramic breeder material K. Munakata, A. Koga, Yoshisato Yokoyama, Fusion Engineering and Design Materials ScienceTritium ReleaseChemical EngineeringNuclear CeramicEngineering	2003	25
Equivalent Circuit Analysis of RF-Integrated Inductors with/without Ferromagnetic Material Masahiro Yamaguchi, Yoshisato Yokoyama, Shinji Ikeda, Japanese Journal of Applied Physics MagnetismElectrical EngineeringEngineeringRadio FrequencyHigh-frequency Device	2003	14
A 29.2 Mb/mm<sup>2</sup> Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit Yoshisato Yokoyama, Miki Tanaka, Koji Tanaka,	2020	14
2RW dual-port SRAM design challenges in advanced technology nodes Koji Nii, Makoto Yabuuchi, Yoshisato Yokoyama,	2015	13
Effect of catalytic metals on tritium release from ceramic breeder materials K. Munakata, Yoshisato Yokoyama, A. Koga, Journal of Nuclear Materials Materials ScienceTritium ReleaseChemical EngineeringNuclear CeramicEngineering	2002	11
40 nm Dual-port and two-port SRAMs for automotive MCU applications under the wide temperature range of &#x2212;40 to 170&#x00B0;C with test screening against write disturb issues Yoshisato Yokoyama, Yuichiro Ishii, Koji Tanaka,	2014	10

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