Akinori Seki

Solution Growth on Concave Surface of 4H-SiC Crystal

Hironori Daikoku, Motohisa Kado, Akinori Seki et al. · Crystal Growth & Design · 2016 · 67 citations

Materials Science, Engineering, Solution Growth +7

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Katsunori Danno, Hiroaki Saitoh, Akinori Seki et al. · Materials science forum · 2010 · 51 citations

Engineering, Crystal Growth Technology, Typical Growth Rate +16

Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

Shinya Ohmagari, Hideaki Yamada, Nobuteru Tsubouchi et al. · Applied Physics Letters · 2019 · 33 citations

Materials Engineering, Materials Science, Electrical Engineering +15

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

Akinori Seki, F. Konushi, J. Kudo et al. · Japanese Journal of Applied Physics · 1987 · 29 citations

Semiconductors, Materials Science, Electrical Engineering +14

Solution Growth of <i>p</i>-Type 4H-SiC Bulk Crystals with Low Resistivity

Takayuki Shirai, Katsunori Danno, Akinori Seki et al. · Materials science forum · 2014 · 27 citations

Materials Engineering, Materials Science, Electrical Engineering +14