Peter G. Burke

Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics

Hongchao Wang, Je‐Hyeong Bahk, Chanyoung Kang et al. · Proceedings of the National Academy of Sciences · 2014 · 134 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Erin C. H. Kyle, Stephen W. Kaun, Peter G. Burke et al. · Journal of Applied Physics · 2014 · 133 citations

Engineering, Materials Engineering, Materials Science +17

An improved model for non-resonant terahertz detection in field-effect transistors

Sascha Preu, S. Kim, Ravi Verma et al. · Journal of Applied Physics · 2012 · 91 citations

Engineering, Electrical Engineering, Physics +17

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Stephen W. Kaun, Peter G. Burke, Man Hoi Wong et al. · Applied Physics Letters · 2012 · 76 citations

Engineering, Materials Engineering, Materials Science +17

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Stephen W. Kaun, Elaheh Ahmadi, B. Mazumder et al. · Semiconductor Science and Technology · 2014 · 49 citations

Engineering, Materials Science, Physics +17