T.T. Braggins

Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

P.R. Norton, T.T. Braggins, H. J. Levinstein · Physical review. B, Solid state · 1973 · 205 citations

Natural Sciences, Materials Science, Physics +17

Critical parameters in the single-target sputtering of YBa2Cu3O7

J. R. Gavaler, J. Talvacchio, T.T. Braggins et al. · Journal of Applied Physics · 1991 · 85 citations

Natural Sciences, Materials Science, Physics +17

Chemical sensing using nonoptical microelectromechanical systems

C. B. Freidhoff, Robert M. Young, Sharath Sriram et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 60 citations · Full text

Engineering, Chemical Engineering, Mechanical Engineering +16

Low-loss bandpass RF filter using MEMS capacitance switches to achieve a one-octave tuning range and independently variable bandwidth

Robert M. Young, J.D. Adam, C.R. Vale et al. · 2003 · 57 citations

Engineering, Electrical Engineering, Microelectromechanical Systems +16

Compensation of residual boron impurities in extrinsic indium-doped silicon by neutron transmutation of silicon

R.N. Thomas, T.T. Braggins, H. McD. Hobgood et al. · Journal of Applied Physics · 1978 · 54 citations

Engineering, Materials Engineering, Materials Science +17