Tahira Akbar

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail et al. · Scientific Reports · 2017 · 106 citations · Full text

Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

Muhammad Ismail, Shafqat-Un Nisa, Anwar Manzoor Rana et al. · Applied Physics Letters · 2019 · 50 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

Muhammad Ismail, Asma Hayati Ahmad, Khalid Mahmood et al. · Applied Surface Science · 2019 · 35 citations

Room Temperature, Electrical Engineering, Non-volatile Memory +5

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana et al. · Nanoscale Research Letters · 2018 · 29 citations · Full text