Ijaz Talib

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail et al. · Scientific Reports · 2017 · 106 citations · Full text

Forming-free bipolar resistive switching in nonstoichiometric ceria films

Muhammad Ismail, Chun-Yang Huang, Debashis Panda et al. · Nanoscale Research Letters · 2014 · 103 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

Muhammad Ismail, Ejaz Ahmed, Anwar Manzoor Rana et al. · ACS Applied Materials & Interfaces · 2016 · 91 citations

Engineering, Conductive Filaments, Semiconductor Device +17

Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices

Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana et al. · Journal of Applied Physics · 2015 · 43 citations

Non-volatile Memory, Engineering, Bilayer Structure +17

Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

Muhammad Ismail, Anwar Manzoor Rana, Ijaz Talib et al. · Solid State Communications · 2014 · 37 citations

Materials Science, Electrical Engineering, Ito/ceo2/ito Structure +9