Florian Tendille

Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Florian Tendille, P. de Mierry, P. Vennéguès et al. · Journal of Crystal Growth · 2014 · 65 citations

Engineering, Materials Engineering, Materials Science +16

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh, Éric Frayssinet, Christophe Rodriguez et al. · Energies · 2021 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennéguès, Florian Tendille, P. de Mierry · Journal of Physics D Applied Physics · 2015 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, Samuel Matta, Thi-Huong Ngo et al. · Materials Science in Semiconductor Processing · 2016 · 15 citations

Engineering, Materials Science, Physics +12

Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

Florian Tendille, Maxime Hugues, P. Vennéguès et al. · Semiconductor Science and Technology · 2015 · 14 citations

Engineering, Materials Engineering, Materials Science +17