R. Nakamura

High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN

Motoaki Iwaya, Shinji Terao, Tomoaki Sano et al. · physica status solidi (a) · 2001 · 71 citations

Engineering, Electrical Engineering, Materials Science +16

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Theeradetch Detchprohm, Masahiro Yano, Shigekazu Sano et al. · Japanese Journal of Applied Physics · 2001 · 59 citations

Engineering, Materials Engineering, Materials Science +17

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Motoaki Iwaya, Shinji Terao, Tomoaki Sano et al. · Journal of Crystal Growth · 2002 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +16

The high-pressure phase relation of the MgSO4–H2O system and its implication for the internal structure of Ganymede

R. Nakamura, Eiji Ohtani · Icarus · 2010 · 34 citations

Natural Sciences, Chemical Engineering, Chemistry +16

Fracture of Al_xGa_1-xN/GaN Heterostructure –Compositional and Impurity Dependence–

Shinji Terao, Motoaki Iwaya, R. Nakamura et al. · Japanese Journal of Applied Physics · 2001 · 33 citations

Engineering, Materials Engineering, Materials Science +17