T. Scimeca

Surface chemical bonding of selenium-treated GaAs(111)<i>A</i>, (100), and (111)<i>B</i>

T. Scimeca, Y. Watanabe, R. Berrigan et al. · Physical review. B, Condensed matter · 1992 · 76 citations

Temperature-dependent changes on the sulfur-passivated GaAs (111)<i>A</i>, (100), and (111)<i>B</i>surfaces

T. Scimeca, Yasuji Muramatsu, M. Oshima et al. · Physical review. B, Condensed matter · 1991 · 64 citations

Semiconductors, Ii-vi Semiconductor, Sulfur-passivated Gaas +13

Surface structure of Se-treated GaAs(001) from angle-resolved analysis of core-level photoelectron spectra

Fumihiko Maeda, Yoshio Watanabe, T. Scimeca et al. · Physical review. B, Condensed matter · 1993 · 36 citations

Materials Science, Core-level Photoelectron Spectra, Angle-resolved Analysis +14

Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy

Masaharu Oshima, T. Scimeca, Yoshio Watanabe et al. · Japanese Journal of Applied Physics · 1993 · 35 citations

Nh 4, Ii-vi Semiconductor, Electrical Engineering +13

Controlled passivation of GaAs by Se treatment

T. Scimeca, Y. Watanabe, Fumihiko Maeda et al. · Applied Physics Letters · 1993 · 28 citations

Semiconductors, Electrical Engineering, Se Exposure +12