T. Scimeca - Concepedia

Author

T. Scimeca

NTT Basic Research Laboratories

Also Known As

T Scimeca, T. Scimeca, Tom SCIMECA, Tom Scimeca, Tom Scimeca Tom Scimeca

Publications

396

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories University of Tsukuba

About

T. Scimeca is an author at NTT Basic Research Laboratories specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	228
2	Applied Physics	8	8	228
3	Chemistry	4	4	132
4	Electrical Engineering	4	4	95
5	Natural Sciences	1	1	64

T. Scimeca

Publications

304

Citations

H-Index

Page 1

	Year	Citations
Surface chemical bonding of selenium-treated GaAs(111)<i>A</i>, (100), and (111)<i>B</i> T. Scimeca, Y. Watanabe, R. Berrigan, Physical review. B, Condensed matter	1992	76
Temperature-dependent changes on the sulfur-passivated GaAs (111)<i>A</i>, (100), and (111)<i>B</i>surfaces T. Scimeca, Yasuji Muramatsu, M. Oshima, Physical review. B, Condensed matter SemiconductorsIi-vi SemiconductorSulfur-passivated GaasEngineeringPhysics	1991	64
Surface structure of Se-treated GaAs(001) from angle-resolved analysis of core-level photoelectron spectra Fumihiko Maeda, Yoshio Watanabe, T. Scimeca, Physical review. B, Condensed matter Materials ScienceCore-level Photoelectron SpectraAngle-resolved AnalysisSe ComponentsSe 3D	1993	36
Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy Masaharu Oshima, T. Scimeca, Yoshio Watanabe, Japanese Journal of Applied Physics Nh 4Ii-vi SemiconductorElectrical EngineeringPhotoluminescencePhotoelectron Spectroscopy	1993	35
Controlled passivation of GaAs by Se treatment T. Scimeca, Y. Watanabe, Fumihiko Maeda, Applied Physics Letters SemiconductorsElectrical EngineeringSe ExposureEngineeringPhysics	1993	28
Bonding partner change reaction in oxidation of Ge on Si(001): Observation of two step formation of SiO2 K. Prabhakaran, T. Ogino, T. Scimeca, Applied Physics Letters EngineeringFirst StepNanoelectronicsOxide ElectronicsSurface Science	1994	23
Selective, Maskless Growth of InSb on Selenium-Treated GaAs by Molecular Beam Epitaxy Yoshio Watanabe, T. Scimeca, Fumihiko Maeda, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringEngineeringCrystalline Defects	1994	20
Surface oxidation of selenium treated GaAs(100) T. Scimeca, Y. Watanabe, Fumihiko Maeda, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	1994	12
Deposition of CaF2 and GaF3 on sulfur passivated GaAs(111)A, 100, and (111)B surfaces T. Scimeca, Yasuji Muramatsu, M. Oshima, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductorsEngineeringS Surface Segregation	1992	10

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