G.K. Regel

MOCVD of AlGaAs/GaAs with novel group III compounds

V. Frese, G.K. Regel, H. Hardtdegen et al. · Journal of Electronic Materials · 1990 · 36 citations

Engineering, Materials Engineering, Materials Science +12

Physical properties of non-pyrophoric group III precursors for MOVPE

L. Pohl, M. Hostalek, Herbert Schumann et al. · Journal of Crystal Growth · 1991 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +5

Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

M. Hostalek, L. Pohl, A. Brauers et al. · Thin Solid Films · 1989 · 22 citations

Natural Sciences, Chemistry, Materials Science +10

Coordinatively saturated Ga compounds — A new type of group III precursor for the MOCVD of GaAs

V. Frese, G.K. Regel, H. Hardtdegen et al. · Journal of Crystal Growth · 1990 · 15 citations

Engineering, Materials Engineering, Materials Science +11

Effect of doping on the thermal oxidation of GaAs

N. Levinsohn, R. Beserman, C. Cytermann et al. · Applied Physics Letters · 1990 · 15 citations

Engineering, Materials Engineering, Materials Science +17