P. Bedrossian

Surface doping and stabilization of Si(111) with boron

P. Bedrossian, Robert D. Meade, Kell Mortensen et al. · Physical Review Letters · 1989 · 243 citations · Full text

Surface Doping, Boron Nitride, Engineering +13

Demonstration of the tunnel-diode effect on an atomic scale

P. Bedrossian, D. M. Chen, Kell Mortensen et al. · Nature · 1989 · 118 citations

Engineering, Tunneling Microscopy, Physics +4

X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface

J. Zegenhagen, J. R. Patel, P. E. Freeland et al. · Physical review. B, Condensed matter · 1989 · 98 citations

X-ray Spectroscopy, Engineering, Electron Diffraction +17

Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1

P. Bedrossian, T. Klitsner · Physical Review Letters · 1992 · 96 citations

Electrical Engineering, Preferential Annihilation, Engineering +12

Si Binding and Nucleation on Si(100)

P. Bedrossian · Physical Review Letters · 1995 · 96 citations

Materials Science, Engineering, Dimer Bonds +14