F. N. Schwettmann

On the nature of the kink in the carrier profile for phosphorus-diffused layers in silicon

F. N. Schwettmann, Don L. Kendall · Applied Physics Letters · 1972 · 50 citations

Materials Science, Enhanced Diffusion, Engineering +15

Diffusion of Boron from Implanted Sources under Oxidizing Conditions

J.L. Prince, F. N. Schwettmann · Journal of The Electrochemical Society · 1974 · 45 citations

Materials Science, Boron Nitride, Engineering +8

Characterization of incomplete activation of high-dose boron implants in silicon

F. N. Schwettmann · Journal of Applied Physics · 1974 · 41 citations

Ion Implantation, Semiconductor Device, Engineering +13

Enhanced diffusion during the implantation of arsenic in silicon

F. N. Schwettmann · Applied Physics Letters · 1973 · 36 citations

Materials Science, Enhanced Diffusion, Ion Implantation +9

Proton-induced X-ray cross sections for selected elements Fe to As and applications of X-ray analysis to semiconductor systems

Tom J. Gray, R.D. Lear, R. J. Dexter et al. · Thin Solid Films · 1973 · 30 citations

X-ray Spectroscopy, Engineering, Physics +7