Diffusion of Boron from Implanted Sources under Oxidizing Conditions

Abstract

Diffusion of boron from sources implanted at 80 keV was investigated experimentally and mathematically over the range 1000°–1200°C for boron doses of , and . Diffusion was in steam ambient and oxide thickness grown ranged from 0.2 to 1.2 μm. The boron diffusion coefficient was determined over the range of temperatures investigated. The segregation coefficient of boron in the Si‐SiO2 system was found to range from 1.8 at 1200°C to 10 at 1000°C. "Normal" diffusion was observed in all cases except that of diffusion at 1000°C for short times.