D. K. Sharma

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

Daniele Ielmini, D. K. Sharma, Simone Lavizzari et al. · IEEE Transactions on Electron Devices · 2009 · 170 citations

Engineering, Memory Design, Emerging Memory Technology +20

Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation

Daniele Ielmini, Simone Lavizzari, D. K. Sharma et al. · 2007 · 149 citations

Materials Science, Resistance Drift, Electrical Engineering +14

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

Daniele Ielmini, Simone Lavizzari, D. K. Sharma et al. · Applied Physics Letters · 2008 · 89 citations

Materials Engineering, Materials Science, Semiconductors +14

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

Simone Lavizzari, Daniele Ielmini, D. K. Sharma et al. · IEEE Transactions on Electron Devices · 2009 · 72 citations

Materials Science, Electrical Engineering, Engineering +14

Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells

Daniele Ielmini, D. K. Sharma, Simone Lavizzari et al. · 2008 · 39 citations

Relaxation Process, Engineering, Phase Change Memory +18