Shunsuke Ohtsuka

Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy

Eiji Ikeda, Hideki Hasegawa, Shunsuke Ohtsuka et al. · Japanese Journal of Applied Physics · 1988 · 85 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +14

Nonlinear optical property of CdTe microcrystallites doped glasses fabricated by laser evaporation method

Shunsuke Ohtsuka, Tadashi Koyama, Keiji Tsunetomo et al. · Applied Physics Letters · 1992 · 59 citations · Full text

Optical Materials, Engineering, Luminescent Glass +17

Atomic layer epitaxy of GaAs using triethylgallium and arsine

Hideo Ohno, Shunsuke Ohtsuka, Hisayoshi Ishii et al. · Applied Physics Letters · 1989 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Fabrication of microcrystallites of II–IV compound semiconductors by laser ablation method

Tadashi Koyama, Shunsuke Ohtsuka, Hisao Nagata et al. · Journal of Crystal Growth · 1992 · 28 citations

Materials Science, Laser Ablation Method, Advanced Laser Processing +6

Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE

Hideo Ohno, Shunsuke Ohtsuka, Atsushi Ohuchi et al. · Journal of Crystal Growth · 1988 · 23 citations

Semiconductors, Gaas/inas Superlattice Structures, Materials Science +7