Noah Allen

Vertical Ga₂O₃Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm²

Noah Allen, Ming Xiao, Xiaodong Yan et al. · IEEE Electron Device Letters · 2019 · 209 citations

Engineering, Electrical Engineering, Materials Science +13

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Timothy Ciarkowski, Noah Allen, E.P. Carlson et al. · Materials · 2019 · 26 citations · Full text

Engineering, Materials Engineering, Materials Science +11

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Jingshan Wang, C. Youtsey, Robert McCarthy et al. · Applied Physics Letters · 2017 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

Peter Nguyen, Michael Clavel, Patrick S. Goley et al. · IEEE Journal of the Electron Devices Society · 2015 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights

Noah Allen, Timothy Ciarkowski, E.P. Carlson et al. · Semiconductor Science and Technology · 2019 · 10 citations

Engineering, Electrical Engineering, Materials Science +17