F. Shimogishi

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Active since

2002

Affiliations

Japan Advanced Institute of Science and Technology(Current)

F. Shimogishi is an author at Japan Advanced Institute of Science and Technology specializing in semiconductor physics, physics, and materials science.

Publications per year

2002–2006

Publications

Percolation transition of the quasi-two-dimensional hole system in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">δ</mml:mi></mml:math>-doped GaAs structures

Jung-Pil Noh, F. Shimogishi, Y. Idutsu et al. · Physical Review B · 2004 · 14 citations

Natural Sciences, Materials Science, Physics +16

Strong localization of carriers in δ-doped GaAs structures

Jung-Pil Noh, F. Shimogishi, N. Ōtsuka · Physical review. B, Condensed matter · 2003 · 14 citations · Full text

Engineering, Materials Science, Physics +17

Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures

F. Shimogishi, Kohki Mukai, Shuma Fukushima et al. · Physical review. B, Condensed matter · 2002 · 13 citations · Full text

Natural Sciences, Materials Science, Physics +16

Negative magnetoresistance of Be<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped GaAs structures

Y. Idutsu, Jung-Pil Noh, F. Shimogishi et al. · Physical Review B · 2006 · 12 citations

Natural Sciences, Materials Science, Physics +13

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