D. Korucu

Temperature dependent I–V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

D. Korucu, A. Türüt, Hasan Efeoğlu · Physica B Condensed Matter · 2013 · 56 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +6

The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range

D. Korucu, A. Türüt, Ş. Altındal · Current Applied Physics · 2013 · 41 citations

Electrical Engineering, Semiconductor Device, Engineering +7

The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode

M. Sağlam, D. Korucu, A. Türüt · Polymer · 2004 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +5

Current–voltage–temperature characteristics of Au/p-InP Schottky barrier diode

D. Korucu, S. Duman · Thin Solid Films · 2013 · 32 citations

Semiconductor Technology, Electrical Engineering, Engineering +4

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

D. Korucu, A. Türüt, Raşit Turan et al. · Materials Science in Semiconductor Processing · 2012 · 22 citations · Full text

Electrical Engineering, Engineering, Electronic Engineering +5