Zhaonian Yang

Tunnel Field-Effect Transistor With an L-Shaped Gate

Zhaonian Yang · IEEE Electron Device Letters · 2016 · 214 citations

Engineering, Electrical Engineering, Microelectronics +12

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

Wei Li, Hongxia Liu, Shulong Wang et al. · Nanoscale Research Letters · 2017 · 92 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Two ESD Detection Circuits for 3$\times$ VDD-Tolerant I/O Buffer in Low-Voltage CMOS Processes With Low Leakage Currents

Hongxia Liu, Zhaonian Yang, Qingqing Zhuo · IEEE Transactions on Device and Materials Reliability · 2012 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17

Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET

Zhaonian Yang, Yue Zhang, Yuan Yang et al. · IEEE Electron Device Letters · 2017 · 13 citations

Engineering, Electrical Engineering, Microelectronics +14

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

Zhaonian Yang, Yue Zhang, Yuan Yang et al. · Superlattices and Microstructures · 2017 · 10 citations

Engineering, Electrical Engineering, Electronic Materials +9