V. V. Vasiliev

<title>HgCdTe epilayers on GaAs: growth and devices</title>

V. V. Vasiliev, S. A. Dvoretsky, V. N. Ovsyuk et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 56 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +13

Frequency control of tunable lasers using a frequency-calibrated λ-meter in an experiment on preparation of Rydberg atoms in a magneto-optical trap

S. A. Saakyan, Vladimir A. Sautenkov, E V Vilshanskaya et al. · Quantum Electronics · 2015 · 27 citations

Engineering, Laser Science, Cavity Qed +16

Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

S. N. Nesmelov, S. M. Dzyadookh, Yu. G. Sidorov et al. · Semiconductors · 2008 · 12 citations

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

S. A. Dvoretsky, Yuri G. Sidorov, T. I. Zakhar’yash et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2005 · 12 citations

Wide-bandgap Semiconductor, Engineering, Gaas Hs +18

Feedback spectroscopy of atomic resonances

V. I. Yudin, D. I. Sevostianov, V. L. Velichansky et al. · Physical Review A · 2013 · 10 citations · Full text

Optical Materials, Engineering, Magnetic Resonance +16